Filter By:

Journal Check one or more journals to show results from those journals only.

Choose more journals

Article type Check one or more article types to show results from those article types only.
Subject Check one or more subjects to show results from those subjects only.
Date Choose a date option to show results from those dates only.

Custom date range

Clear all filters
Sort by:
Showing 1–5 of 5 results
Advanced filters: Author: Stefan Slesazeck Clear advanced filters
  • Designing efficient reconfigurable field effect transistors remains a challenge. Here, the authors develop a transistor with three distinct operation modes, realized directly on an industrial 22nm FDSOI platform, demonstrating a reconfigurable analog circuit element with signal follower, phase shifter, and frequency doubler operation.

    • Maik Simon
    • Halid Mulaosmanovic
    • Jens Trommer
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-9
  • Applying an electric field to an antiferroelectric material transforms its non-polar crystal structure into a polar one. Here, the authors show that the antiferroelectric transition in zirconia causes a negative capacitance, useful for electronics.

    • Michael Hoffmann
    • Zheng Wang
    • Asif Islam Khan
    ResearchOpen Access
    Nature Communications
    Volume: 13, P: 1-8
  • Progress towards low-power electronics based on negative capacitance has been slow. For the field to develop, the gap between fundamental research on ferroelectric materials and the engineering of practical devices needs to be bridged.

    • Michael Hoffmann
    • Stefan Slesazeck
    • Thomas Mikolajick
    Comments & Opinion
    Nature Electronics
    Volume: 3, P: 504-506
  • A ferroelectric thin film that behaves as a single domain is found to exhibit both negative capacitance and the predicted double-well polarization–energy relationship.

    • Michael Hoffmann
    • Franz P. G. Fengler
    • Thomas Mikolajick
    Research
    Nature
    Volume: 565, P: 464-467