Bifacial Cu(In,Ga)Se2 photovoltaics have limited efficiency. Now Yang et al. have developed a process for low-temperature deposition of the absorber material that suppresses the formation of a detrimental GaOx interlayer and reduces the back interface recombination, enabling efficiencies of over 19% and 10% under front and rear illumination, respectively.
- Shih-Chi Yang
- Tzu-Ying Lin
- Romain Carron
