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Showing 1–11 of 11 results
Advanced filters: Author: Vincent Bouchiat Clear advanced filters
  • An investigation of Coulomb drag in graphene integrated into a stacked heterostructure unveils unexpected electron–hole symmetry-breaking in two-dimensional electronic crystals.

    • Vincent Bouchiat
    News & Views
    Nature Physics
    Volume: 8, P: 862-863
  • When superconducting discs are deposited on graphene they induce local superconducting islands. The phase coupling between the islands can be controlled by a gate. Quantum phase fluctuations kill the superconductivity and lead to a metallic state, however, at higher magnetic fields superconductivity can return.

    • Zheng Han
    • Adrien Allain
    • Vincent Bouchiat
    Research
    Nature Physics
    Volume: 10, P: 380-386
  • Although intrinsic superconductivity in graphene has not been demonstrated yet, superconductivity in this material can be induced by the proximity effect. The deposition of metallic nanoparticles on a graphene layer allows the status of graphene to be tuned from insulating to superconducting. This metal–graphene hybrid material can therefore be seen as a model system to elucidate the properties of inhomogeneous superconductors.

    • Adrien Allain
    • Zheng Han
    • Vincent Bouchiat
    Research
    Nature Materials
    Volume: 11, P: 590-594
  • A protein-only redox film inspired by the architecture of bacterial electroactive biofilms has been developed. The film is formed using a rubredoxin–prion domain chimeric protein. The prion domains self-assemble into fibres that are decorated with rubredoxin. This results in highly organized films, able to transport electrons over several microns, and wire enzymes to electrodes.

    • Lucie Altamura
    • Christophe Horvath
    • Vincent Forge
    Research
    Nature Chemistry
    Volume: 9, P: 157-163
  • A single quantum system comprising a nitrogen-vacancy in diamond is now coupled to a nanowire cantilever. Magnetic fields can then couple the nitrogen-vacancy spin and the oscillator enabling read-out of the nanometre-scale motion.

    • O. Arcizet
    • V. Jacques
    • S. Seidelin
    Research
    Nature Physics
    Volume: 7, P: 879-883
  • Single-molecule transistors have enabled studies of magnetism and other correlated nanoscale behaviour, but superconductivity has not been observed with this approach. It is now shown that superconducting junctions on both sides of a C60 molecule induce superconductivity across the whole device.

    • Clemens B. Winkelmann
    • Nicolas Roch
    • Franck Balestro
    Research
    Nature Physics
    Volume: 5, P: 876-879
  • In contrast to bulk materials with complex electronic structure, artificial nanoscale devices could offer a new and simpler vista to the understanding of quantum phase transitions. This paper demonstrates this possibility in a single molecule quantum dot, where the quantum phase transition consists of a crossing of singlet and triplet electron spin states at zero magnetic field. The quantum dot is operated in the Kondo regime, where an uncompensated electron spin on the quantum dot is screened by metallic electrodes. This strong electronic coupling between the quantum dot and the metallic contacts provides the necessary strong electron correlations to observe quantum critical behaviour.

    • Nicolas Roch
    • Serge Florens
    • Franck Balestro
    Research
    Nature
    Volume: 453, P: 633-637
  • Quantum point contacts are gate-tunable constrictions allowing for control of charge carrier transmission in 2D electron gases. Here, the authors fabricate a hBN/graphene/hBN van der Waals heterojunction to enable quantum point contact devices in the integer and fractional quantum Hall regimes.

    • Katrin Zimmermann
    • Anna Jordan
    • Benjamin Sacépé
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-7
  • Van der Waals heterostructures of atomically thin materials hold promise for nanoelectronics. Here, the authors demonstrate a reverted stacking fabrication method for heterostructures and devise a vertical tunnel-contacted MoS2 transistor, enabling gate tunable rectification and reversible pn to np diode behaviour.

    • Xiao-Xi Li
    • Zhi-Qiang Fan
    • Zhi-Dong Zhang
    ResearchOpen Access
    Nature Communications
    Volume: 8, P: 1-7