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Semiconducting epigraphene aligned with single-crystal silicon carbide substrates has a band gap of 0.6  eV and room temperature mobilities 20 times larger than that of other two-dimensional semiconductors, making it suitable for nanoelectronics.

Nanoribbons of graphene grown on electronics-grade silicon carbide conduct electrons much better than expected; at room temperature, the charge carriers travel through the nanoribbons without scattering for a surprisingly long distance, more than ten micrometres.

A demonstration of the ability to transmit spin currents over distances of more than one hundred micrometres with an efficiency of up to 75% in graphene grown epitaxially on silicon carbide improves the prospects of graphene-based spintronic devices.

Graphene oxide could potentially be used for numerous applications, particularly in electronics. Understanding its structural stability in an ambient atmosphere is essential for the realization of devices. A new study shows that multilayer graphene oxide is in fact metastable at room temperature.

In graphene, two particular sets of electrons exist that have a fourfold energy degeneracy. To study the corresponding four quantum states comprising a Landau level, these authors perform measurements on epitaxial graphene at 10 millikelvin. They take spectral 'fingerprints' of the Landau levels, showing in detail how they evolve with magnetic field and how they split into the four separate quantum states. They also observe states with Landau level filling factors of 7/2, 9/2 and 11/2.

Here, the authors show robust edge state transport in patterned nanoribbon networks produced on epigraphene—graphene that is epitaxially grown on non-polar faces of SiC wafers. The edge state forms a zero-energy, one-dimensional ballistic network with dissipationless nodes at ribbon–ribbon junctions.

Design of high-speed graphene-based devices relies on understanding of its ultrafast carrier dynamics. Here, the authors combine time-resolved terahertz spectroscopy and microscopic modelling to unveil the interplay between the scattering mechanisms dominating the ultrafast relaxation pathways in graphene.

Real-space mapping of the quantum Hall state at the Dirac point in epitaxial graphene reveals unexpected localized lifting of the degeneracy of this level. This could be the result of moiré interference caused by the twisting of the top layer with respect to underlying layers, suggesting possible new ways to understand and control the unusual properties of graphene.

The coupling between layers plays an important role in the properties of stacked two-dimensional materials. Here, the authors show that Coulomb interactions between electrons in different layers of graphene induce thermal transport even though all electronic states are confined to individual layers.

Sub-ångström-resolution indentation measurements and semi-analytical methods indicate that, for few-layer-thick films, the elasticity perpendicular to the plane is sensitive to the films’ structure and the presence of intercalated molecules.

Large-scale atomically thin metals can be stabilized through confinement epitaxy at graphene/SiC interface, which exhibit a gradient bonding type and are air stable, providing a compelling platform for quantum and optoelectronic technologies.

The electronic properties of carbon nanotubes are predicted to be very sensitive to their structure. Combining high-resolution electron microscopy with electrical transport provides both confirmation of this and new insights into the transport mechanisms.