We report on the fabrication and electrical characteristics of In2Te3 thin films grown on h-BN using molecular beam epitaxy(MBE). Cross-sectional scanning transmission electron microscopy images showed an atomically clean and abrupt interface between In2Te3 and h-BN substrates. The MBE-grown In2Te3 electronic devices exhibited superior electrical properties compared to previously reported In2Te3 field effect transistors(FETs) and In2Te3-based Schottky diodes.
- Imhwan Kim
- Jinseok Ryu
- Gyu-Chul Yi