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Robust 2D layered MXene matrix–boron carbide hybrid films for neutron radiation shielding

There is an urgent need to develop coatings with good neutron-absorption capacity and workability. Here the authors addressed these challenges by developing a scalable and solution processable two-dimensional Ti₃C₂T_x MXene hybrid film with homogeneously distributed B₄C particles.

Ju-Hyoung Han
Shi-Hyun Seok
Soon-Yong Kwon
ResearchOpen Access31 Oct 2023
Nature Communications

Volume: 14, P: 1-10
Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS₂-PtTe₂ heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts.

Seunguk Song
Aram Yoon
Soon-Yong Kwon
ResearchOpen Access22 Aug 2022
Nature Communications

Volume: 13, P: 1-11
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Two-dimensional metallic WTe₂ and MoTe₂ layers can be combined with a semiconducting MoS₂ monolayer to create metal–semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.

Seunguk Song
Yeoseon Sim
Soon-Yong Kwon
Research06 Apr 2020
Nature Electronics

Volume: 3, P: 207-215

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Robust 2D layered MXene matrix–boron carbide hybrid films for neutron radiation shielding

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

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