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Showing 1–2 of 2 results
Advanced filters: Author: Yuanqiu Tan Clear advanced filters

  • 2D semiconductors are promising candidates for next-generation electronics, but the realization of competitive 2D p-type transistors remains challenging. Here, the authors report the characterization of nitric-oxide-doped monolayer and bilayer WSe2 p-type transistor arrays, showing on-state currents up to 300–448 μA/μm, contact resistance down to 390–875 Ω·μm and on/off ratios of ~ 106−109.

    • Hao-Yu Lan
    • Chih-Pin Lin
    • Zhihong Chen
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-14

  • Probabilistic bits (p-bits) are the base units of probabilistic computing, a computing scheme offering a more efficient approach than conventional binary logic in various applications. Here, the authors report the realization of a p-bit core device by combining stochastic magnetic tunnel junctions and 2D MoS2 transistors on the same chip.

    • John Daniel
    • Zheng Sun
    • Joerg Appenzeller
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-11