Intrinsically stretchable semiconducting polymer materials have been sought for meeting requirements in the development of wearable intelligent electronic devices. In this focus review, our recent progress in main-chain engineering for development of intrinsically stretchable n-type semiconducting materials is described. The topics include four strategies, namely, (i) a conjugation-break spacer approach, (ii) a block copolymer approach, (iii) an all-conjugated statistical terpolymer approach, and (iv) a sequence random copolymer approach, in which specially designed stress-relaxation units or sequences are incorporated along the main chains of naphthalene-diimide-based n-type semiconducting polymers.
- Megumi Matsuda
- Kei-ichiro Sato
- Tomoya Higashihara