Spin-orbit Mott materials such as Sr3Ir3O7 and Sr2IrO4exhibit rich correlation-driven physics, which makes them promising candidates for novel electronic states. Here, the authors explore the effect of hole-doping within the spin-orbit Mott phase and show that the carriers localize within a phase-separated ground state.
- Chetan Dhital
- Tom Hogan
- Stephen D. Wilson
