2D high-κ dielectric materials remain highly sought-after for the future development of 2D electronics. Here, the authors report a 2D edge-seeded heteroepitaxial growth strategy to synthesize CaNb2O6 thin films with equivalent oxide thickness down to 0.7 nm and show their application for high-performance 2D MoS2 transistors.
- Xiulian Fan
- Jiali Yi
- Yu Zhou
