Crystalline high-κ dielectric materials are desired for the development of future 2D electronic devices. Here, the authors report the in-plane and out-of-plane chemical vapor deposition growth of ultrathin Bi2SiO5 crystals with dielectric constant >30 and a band gap of ~3.8 eV, showing their effective application as gate dielectric layers of MoS2 transistors.
- Jiabiao Chen
- Zhaochao Liu
- Jinxiong Wu
