Fig. 3: High-field Hall effect of UTe2.

Hall resistivity of device #1 recorded with two different currents for field-up and -down sweeps (c), (d) at fixed field orientations, θ = 30∘ and 35∘, for various temperatures, and (a) at fixed temperature, T = 0.7 K, for various angles. b Left panel: Hall resistivity recorded for device #2 with I = 100 μA at fixed temperature and different angles. Right panel: The curves were shifted by a constant offset for better visibility. Hm and the hfSC region are highlighted by yellow and blue shaded bars, respectively. Inset in (d): zoom into the region below 50 T.