Fig. 4: Device performance and long-term stability. | Nature Communications

Fig. 4: Device performance and long-term stability.

From: Rationally designed universal passivator for high-performance single-junction and tandem perovskite solar cells

Fig. 4: Device performance and long-term stability.The alternative text for this image may have been generated using AI.

a–c Champion J-V curves of the best-performing control and VBETS-modified (a) 1.53 eV (prepared in the ambient conditions), (b) 1.53 eV (prepared in the glovebox with 99.999% N2 conditions), and (c) 1.66 eV perovskite-based PSC devices in reverse and forward scan mode. d The column-shaped statistical chart of PCE, VOC, JSC, and FF parameters for control devices and VBETS-modified devices based on 1.53 eV, 1.58 eV, and 1.66 eV perovskite as photoactive layer Specifically, * represents that perovskite devices are prepared in N2 glove boxes, while the others are prepared under air ambient conditions. e The EQE spectra and integrated JSC of the champion VBETS-modified PSCs with 1.53 eV, 1.58 eV, and 1.66 eV perovskites. f J-V curves of the 1.58 eV-perovskite-based PSC modules with VBETS modification. The inset is the photograph of a VBETS-modified perovskite module with an aperture area of 32.144 cm2. g Comparison of the historical PCEs of the PSC module with an aperture area exceeding 30 cm2. h Cross-sectional SEM image for exhibiting the device structure of perovskite/HJT crystalline silicon TSCs modified with VBETS. i J-V curves for the TSCs without and with VBETS in reverse and forward scan mode. j MPPT stability curves of the single-junction PSCs without and with VBETS.

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