Fig. 3: X-ray detection characterizations of 4HCB and 4MHB detectors. | Nature Communications

Fig. 3: X-ray detection characterizations of 4HCB and 4MHB detectors.

From: Dimensionality-tailored pure organic semiconductor with high hole mobility for low-dose x-ray imaging

Fig. 3: X-ray detection characterizations of 4HCB and 4MHB detectors.The alternative text for this image may have been generated using AI.

a I-t curves of 4HCB and 4MHB with the dose rate of 131.5–199.5 μGyair s−1 and switching X-ray on and off under 10 V mm−1. b Normalized I-t curves for 4HCB and 4MHB response time comparison at 58.76 μGyair s−1 under 10 V mm−1. c The On-off ratio of 4MHB and 4HCB detectors varying the electric field. d Photocurrent density (J) changes with irradiated X-ray dose rate at bias voltage from 10−200 V. e S for 20 kVp X-ray at a series of bias voltage. f I-t curve of 4MHB detector at the bias of 30 V and varying X-ray dose rates from 33.2 to 96.9 nGyair s−1, with the insertion showing the enlarged transient I-t curve at dose rate of 33.2 nGyair s−1. g Relationship between SNR and D. h The hole mobility-resistivity comparison of 4MHB in this work and other materials. i The S-LoD comparison of 4MHB in this work and other X-ray detector materials. Data in (d,g) are presented as mean ± 5% error.

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