Fig. 2: Detection of spin-canted in-plane ferromagnetism in Fe3Sn thin films.
From: Room temperature observation of the anomalous in-plane Hall effect in a Weyl ferromagnet
a Shown is a transmission electron microscopy (TEM) cross-sectional image of the Fe3Sn(001)/Pt(111)/sapphire(0001) thin film within the \([11\bar{2}0]-[0001]\)-plane, where white and black color correspond to high and low TEM signal intensity. The different layers are annotated. The inset shows a magnification of the atomic layer structure of the Fe3Sn layers and highlights their bilayer stacking along the z-direction. Fe atoms are schematically indicated by red spheres. b Shown is the temperature (T) dependence of the longitudinal resistivity ρxx (solid red line) of Fe3Sn (60 nm)/Pt (5 nm)/sapphire. c Shown is the magnetization M of Fe3Sn (30 nm)/Pt (5 nm)/sapphire for magnetic fields B applied within the xy-plane (red solid line) and along the z-direction (blue solid line) at T = 300 K. The inset shows the raw data of the measured magnetic moment m(B) for B∥xy before the subtraction of the diamagnetic background contributed by the sapphire substrate (see “Methods” section). d Optical micrograph of the circular device structure fabricated from the Fe3Sn/Pt(111)/sapphire(0001) thin films. The numerical contact labels and Cartesian x- and y-axes are indicated. The in-plane component of the sample magnetization Mx is defined to be parallel to the + x-direction. The azimuthal (within xy-plane) angles ϕE and ϕB are defined as the angles between the direction of the electric field E and the x-axis and the direction of the in-plane magnetic field B∥ and the x-axis, respectively. Here, E is always parallel to the direction of the electric bias current I applied between different contact pairs. e Shown is the Hall resistivity ρH at ϕE = 0 measured as a function of a magnetic field Bz applied along the z−direction at T = 300 K. f Shown is a magnification of ρH in (e) at small magnetic field amplitudes for upward and downward sweeps of Bz.
