Fig. 3: Electrical measurements of GMCs. | Nature Communications

Fig. 3: Electrical measurements of GMCs.

From: Computing-in-memory architecture for Kolmogorov-Arnold networks based on tunable Gaussian-like memory cells

Fig. 3: Electrical measurements of GMCs.The alternative text for this image may have been generated using AI.

a Transistor transfer characteristic curves based on independent MoS2 and MoTe2 channels. MoS2-channel transistors exhibit NMOS characteristics, and MoTe2-channel transistors exhibit PMOS characteristics. b The transmission curve using \({V}_{{{{\rm{g}}}}}\) modulation junction, illustrated as schematic diagram of Gaussian transistor. c Potentiation and depression behavior of the Gr/CIPS/Gr memristor. d The transfer characteristics of GMC controlled by the write pulses (with an amplitude of 3 V and a pulse width of 0.5 s). e The 100 s retention performance of the GMC in pristine state (gray) after being written by two consecutive 3 V, 0.5 s pulses (blue). f Distributions of the Gaussian-like fitting parameters \({I}_{{{{\rm{peak}}}}}\) and \({\sigma }_{{\rm{m}}}\) extracted from the 1000 cycle endurance test.

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