Fig. 1: Emergent reactance in the SkL phase of MnSi.
From: Emergent reactance induced by the deformation of a current-driven skyrmion lattice
a Schematic of the dynamical phases of SkL with increasing current density. b Scanning electron micrograph of our micro-fabricated MnSi device (Scale bar = 10 μm), labelled with current I±, longitudinal voltage \({V}_{\pm }^{{\rm{L}}}\), and Hall voltage \({V}_{\pm }^{{\rm{H}}}\) electrodes. c Magnetic phase diagram of MnSi device with helical (H), conical (C), skyrmion lattice (SkL), field polarised (FP), fluctuation disordered (FD), and paramagnetic (PM) phases determined from the Hall resistivity ρyx. The SkL phase is overlaid with a colour map of \({\rho }_{yx}^{{\rm{THE}}}\). A detailed procedure for determining the phase boundaries and topological Hall resistivity is provided in Methods and Supplementary Note 2. d, e Magnetic field dependence at 23 K (d) and colour map on the magnetic field-temperature plane (e) of the transverse reactance Im[ρyx]. f, g Magnetic field dependence at 23 K (f) and colour map on the magnetic field-temperature plane (g) of the longitudinal reactance Im[ρxx]. The transverse and longitudinal reactance were measured with JAC = 6.81 × 108 A m−2 and frequency of f = 509 Hz. The feature at B = 0 T in (d) is a result of the extrinsic reactance from the measurement setup (see Supplementary Note 1).
