Fig. 5

Reconstruction of crystal field levels across the thickness-induced MIT. a Resonant inelastic x-ray scattering (RIXS) intensity as a function of energy transfer for the films indicated for an incident energy of 520 eV (in the dip between L₃ and L₂ peaks). SrVO₃ and CaVO₃ are 50 u.c. films and also shown are 15 u.c., 10 u.c., 6 u.c. and 4 u.c. CaVO₃ films. All data were recorded at a temperature of 20 K, and normalized to the total integrated intensity and offset by additive constants for clarity. Labels indicate the different allowed crystal field excitations for V⁴⁺ and V³⁺ ions. b Schematic of the change in the electronic levels of the V 3d electrons due to reconstruction of the local V site environment and valence occupation