Extended Data Fig. 1: Comparison of transport properties for bulk and device samples of NdAlSi.
From: Emergent electric field induced by dissipative sliding dynamics of domain walls in a Weyl magnet
a, Magnetoresistivity for a bulk single crystal and an FIB fabricated device (Device A). Clear quantum oscillations are observed in both cases, and the transition fields are similar, indicating little degradation during the fabrication process. b, Similar value of the Hall resistivity for a bulk single crystal and for an FIB fabricated device. This indicates that the carrier density is not changed by FIB fabrication. c,d, Oscillatory component in the magnetoresistance in the ferrimagnetic (Ferri) and ferromagnetic (FM) phases, respectively. e,f, A fast Fourier transformed spectrum of the oscillatory component with two frequencies (αS and \({\alpha }_{S}^{{\prime} }\)) and one frequency (βS) in the Ferri and FM phases, respectively.
