Extended Data Fig. 3: Imaginary impedance in the device with a configuration where spin-orbit torque is forbidden.
From: Emergent electric field induced by dissipative sliding dynamics of domain walls in a Weyl magnet
Note that spin-orbit torque (SOT) can in principle be relevant for spin dynamics even in a bulk device of an inversion-breaking, polar material such as NdAlSi. a,b, Measurement configurations for two devices: B∥c, I∥[110] and B∥I∥c referred to as devices A and B, respectively. In device B (panel b), the current is applied along the c-axis of NdAlSi, which corresponds to the polar axis of the crystal. The spin-orbit torque must disappear in this configuration, because the spin polarization p ~ I × P vanishes. c,d, Magnetoresistance (Re(ρxx)) of the two devices. Enhanced Re(ρxx) appears around zero field and originates from the DW resistivity e,f, Imaginary impedance (Im(ρxx)) of the two devices. The similar magnitude of Im(ρxx) between device A and B indicates that the dominant driver of the imaginary impedance in NdAlSi is likely spin-transfer torque.
