Extended Data Fig. 10: Field-effect mobility of 2D Bi2O2Se/Bi2SeO5/HfO2 and Bi2O2Se/HfO2 FinFETs.
From: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide
a,b, Schematic diagram of 2D FinFETs fabricated on 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructure (a) and 2D Bi2O2Se fin (b). c,d, Transfer curves obtained from fabricated 2D Bi2O2Se/Bi2SeO5/HfO2 FinFETs (c) and 2D Bi2O2Se/HfO2 FinFETs (d) with 1.5-μm channel length. e, Transconductance (gm) as a function of gate voltages for 2D Bi2O2Se/Bi2SeO5/HfO2 and Bi2O2Se/HfO2 FinFETs. f, Field-effect mobility (μ) as a function of gate voltages for 2D Bi2O2Se/Bi2SeO5/HfO2 and Bi2O2Se/HfO2 FinFETs.
