Extended Data Fig. 6: Properties of the standard sample of Ru(bpy)3Cl2 thin film and the aggregation-induced emission dye-doped photoresist (AIE-DDPR) film for characterization of QYs and fluorescence on–off contrast of the recorded spots.
From: A 3D nanoscale optical disk memory with petabit capacity
a–c, (a) Chemical formula. The QY of Ru(bpy)3Cl2 thin film is 7.3% which is calculated from the absorbance (b) and the fluorescence emission intensity (c) at an excitation wavelength λ = 480 nm. d, Fluorescence intensity of the AIE-DDPR film at an excitation wavelength λ = 480 nm before exposure to the femtosecond laser (0 mW, i.e., the second state in Fig. 3) and after exposure to the 515-nm femtosecond laser with various writing powers, i.e., 0.3–1.5 mW (i.e., the third state in Fig. 3), and the standard sample of Ru(bpy)3Cl2 thin film. e, Photobleaching: fluorescence on–off contrast of a recorded spot probed by irradiation with a 480-nm pulsed laser. f–h, Fluorescence image obtained at 7 min (f), 27 min (g), and 134 min (h) after the beginning of excitation.
