Table 1 Electrical and optical properties of materials used in simulation.
Parameters | Spiro-OMeTAD (HTL) | Cs2AgBiBr6 (Absorber) | SnO2 (ETL) | ZnO (ETL) |
|---|---|---|---|---|
Thickness(µm) | 0.06 | 0.14 | 0.05 | 0.05 |
Band gap (eV) | 2.9 | 1.61 | 3.6 | 3.3 |
Affinity of electrons χ (eV) | 2.2 | 3.72 | 4.5 | 3.7 |
Permittivity (Dielectric) | 3 | 5.8 | 8 | 9 |
CB efficient state Density (cm− 3) | 2.5 × 1019 | 2 × 1018 | 2.2 × 1018 | 2.2 × 1018 |
VB efficient state Density (cm− 3) | 1.8 × 1019 | 1 × 1018 | 1.8 × 1018 | 1.8 × 1019 |
Mobility of electrons (cm2/V. s) | 2 × 10− 4 | 9.28 | 15 | 100 |
Mobility of holes (cm2/V. s) | 2 × 10− 4 | 9.28 | 15 | 25 |
Concentration of the acceptor dopant (cm− 3) | 1 × 1017 | 0 | 1 × 1018 | 1 × 1018 |
Concentration of the donor dopant (cm− 3) | 1 × 1015 | 1 × 1015 | 0 | 0 |