Fig. 6: Close contact simulations of Pd/MoGe2P4 and Pd/WGe2P4 with an interlayer distance of 2 Å.
From: Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

a the structure of Pd/MoGe2Si4, b electronic band structure of MoGe2P4 monolayer, c the projected electronic band structure and the partial density of states of Pd/MoGe2Si4. d–f same as a–c, respectively, for Pd/WGe2P4 contact.