Extended Data Fig. 8: Long-term operational stability of 2D iontronic devices.
From: Solid-state thermometry via ionic–electronic coupling in two-dimensional heterostructures
Temporal evolution of drain voltage (\({{\rm{V}}}_{{\rm{D}}}\)) for MoS₂-based iontronic FETs gated with a) LiInP2S6, and b) CuInP2S6, respectively, over three consecutive days and across the temperature range of 80 °C to 110 °C. c-d) scatter plot of \({{\rm{\tau }}}_{{\rm{D}}}\), that is, the time required to reach the compliance voltage, extracted from (a-b) as a function of temperature, measured over three days. Notably, \({{\rm{\tau }}}_{{\rm{D}}}\) remains consistent over all three days for a given temperature for both thiophosphate materials, confirming the repeatability of the sensing platform.
