Extended Data Fig. 2: Multiple top-gated MoS2 FETs with ABP2X6 dielectrics. | Nature Sensors

Extended Data Fig. 2: Multiple top-gated MoS2 FETs with ABP2X6 dielectrics.

From: Solid-state thermometry via ionic–electronic coupling in two-dimensional heterostructures

Extended Data Fig. 2: Multiple top-gated MoS2 FETs with ABP2X6 dielectrics.The alternative text for this image may have been generated using AI.

Dual-sweep top-gate transfer characteristic of a) LiInP2S6, b) LiInP2Se6, c) CuInP2S6, d) AgInP2S6 and e) AgScP2S6–gated MoS2 FETs. Note that all the top-gated MoS2 FETs exhibit a steeper SS during the forward sweep and a broader SS during the reverse sweep, indicating that the mobile ions lag the applied electric field, resulting in a time-dependent redistribution of the internal electrostatic potential.

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