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Nature Electronics (2)
Light: Science & Applications (1)

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Showing 1–3 of 3 results

Advanced filters: Author: Clarissa Convertino Clear advanced filters

A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal–oxide–semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power logic systems.

Clarissa Convertino
Cezar B. Zota
Kirsten E. Moselund
Research08 Feb 2021
Nature Electronics

Volume: 4, P: 162-170
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gallium arsenide, can be scaled down to a gate length of 14 nm.

Carlos Navarro
Siegfried Karg
Francisco Gamiz
Research19 Aug 2019
Nature Electronics

Volume: 2, P: 412-419
The plasmonic BTO-on-SiN platform – beyond 200 GBd modulation for optical communications

This plasmonic BTO-on-SiN platform enables 256 GBd high-speed data transmission. It can further operate beyond 200 GBd for IQ and O-band racetrack modulators within highly compact device footprints.

Manuel Kohli
Daniel Chelladurai
Juerg Leuthold
ResearchOpen Access16 Dec 2025
Light: Science & Applications

Volume: 14, P: 1-11