Figure 3: Temperature dependence of ZT for two different groups of nanowires.
From: Silicon nanowires as efficient thermoelectric materials
The cross-sectional area of the nanowires, and the p-type doping level, are given. The 20-nm-wide nanowires have a thermopower that is dominated by phonon contributions, and a ZT value ∼1 is achieved near 200 K. The smaller (10-nm-wide) nanowires have a thermopower that is dominated by electronic contributions. The ZT at 350 K is calculated using the thermal conductivity value for the 10-nm-wide nanowires at 300 K. The error bars represent 95% confidence limits.
