Fig. 11: Micro-LED surface passivation by H2 plasma.
From: Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
a Micro-LED structure with H2 plasma sidewall passivation, b I–V characteristics of fabricated micro-LED arrays, c EQE curves of fabricated micro-LED arrays. Reproduced from ref. 139 © 2022, P. Kirilenko et al. under the terms of the Creative Commons Attribution 4.0 License
