Fig. 14: Confined selective epitaxy for ultra-small micro-LED direct growth.
From: Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
Schematic of the process flow (a) SiO2 deposition, (b) SiO2 mask patterning, and (c) micro-LED array overgrowth. d Top-view and e cross-sectional SEM images of micro-LED arrays. Reproduced from ref. 158 © 2020, American Chemical Society under the terms of the Creative Commons Attribution 4.0 License
