Fig. 15: Tailored ion implantation technique for sub-micro LED fabrication.
From: Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect

Schematic diagrams of (a) micro-LEDs fabricated by plasma etching, (b) micro-LEDs fabricated by ion-implantation, (c) micro-LEDs fabricated by tailored ion implantation, (d) ion scattering at the mask edge, and (e) effect of implantation temperature on the vacancy generation. Reproduced with permission from ref. 169 © 2021, J. Park et al