Fig. 7: Modeling and simulation of the micro-LED sidewall effect.
From: Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
Calculated carrier concentration distribution in the quantum well (the one adjacent to the p-side) of (a) LED I (100 µm), LED II (60 µm), and LED III (20 µm) without “dead zone” and (b) LED A (100 µm), LED B (60 µm), and LED C (20 µm) with “dead zone.” Reproduced with permission from ref. 66 © 2019, Optical Society of America
