Fig. 8: Micro-LED sidewall before and after TMAH treatment.
From: Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect
SEM images of m-plane sidewalls (a) before and (b) after TMAH treatment, HAADF-STEM images at the MQW/SiO2 interface (c) before and (d) after TMAH treatment, BF-STEM images of lattice arrangement at the MQW/SiO2 interface (e) before and (f) after TMAH treatment, HAADF-STEM images of the quantum well and barrier far away from the sidewall (>300 nm) (g) before and (h) after TMAH treatment, (i) schematic diagram of carrier recombination near the mesa sidewall, (j) schematic diagram of light extraction enhancement enabled by the rough sidewall morphology. Reproduced with permission from ref. 32 © 2023, John Wiley and Sons
