Table 2 Summary of the advantages and disadvantages of patterning techniques for constructing perovskite film photodetectors of different dimensions
From: Recent progress in the patterning of perovskite films for photodetector applications
Patterning technology | Process accuracy | Advantages | Disadvantages | Industrial manufacturing | |
|---|---|---|---|---|---|
Template-confined growth patterning | Template-separation assisted patterning | Several hundred nanometers to several micrometers | Simple principle, no damage to the resulting perovskite, and reusable templates | Requires a template, potential damage to the template during demolding, and high costs of precision templates | Widely used in PD, applied to research frontiers (flexible wearable devices, electrochemical eyes), low cost and energy-efficient, high potential for scalability, suitable for constructing flexible devices |
Structural template assisted patterning | |||||
Inkjet printing patterning | Inkjet printing patterning method based on perovskite precursor inks | several micrometers | No template required, high material utilization, capability to fabricate complex patterns, and wide application range | Presence of “coffee ring” effect, difficulty in achieving fine details for complex patterns, and the requirement for sophisticated equipment | High flexibility, minimal material waste, high patterning precision, moderate cost, low energy consumption, high potential for scalability, suitable for constructing flexible devices, but ink composition needs optimization |
Inkjet printing patterning method based on perovskite quantum dot solutions | |||||
Vapor deposition growth patterning | - | several micrometers | No damage to the fabricated patterned perovskite, and the process is relatively simple | The required equipment is expensive, and the patterning accuracy needs improvement | Dominates large-area fabrication of graphene and carbon nanotubes, suitable for organic material coatings, high cost, high energy consumption, suitable for constructing flexible devices |
Seed-induced growth patterning | - | Several tens of nanometers | Applicable for single crystal growth | Significant substrate limitations and low patterning accuracy | Emerging technology, high patterning accuracy, good substrate compatibility, moderate cost, low energy consumption, suitable for constructing flexible devices |
Conventional photolithogra-phy patterning | Focused ion beam lithography patterning | Several hundred nanometers to several micrometers | No need for templates, widest application range, high precision, programmable operation, and mature process | Causes damage to perovskite materials and involves high equipment costs | Extremely high patterning accuracy, very high cost, high energy consumption, can cause damage to the thin film surface, suitable for constructing flexible devices |
Electron beam lithography patterning | |||||
Laser direct writing patterning | |||||
Laser-induced modification patterning | |||||
