Fig. 3: Measured frequency shifts and AR changes of the proposed 1, 2, and 3-DoF devices during the gas sensing process. | Microsystems & Nanoengineering

Fig. 3: Measured frequency shifts and AR changes of the proposed 1, 2, and 3-DoF devices during the gas sensing process.

From: Multi-DoF AlN-on-SOI BAW MEMS resonators with coated ZIF-8 for gas sensing application

Fig. 3

a Frequency shifts of 1-DoF device. b Frequency shifts of 2-DoF device (Mode 2). c AR changes of the 2-DoF device (Mode 2). d Frequency shifts of 3-DoF device (Mode 1). e AR changes of the 3-DoF device (Mode 1). f Frequency shifts of 3-DoF device (Mode 2). g AR changes of the 3-DoF device (Mode 2)

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