Fig. 4: Calculated sensitivity based on the extracted frequency shifts and AR changes of the proposed 1, 2, and 3-DoF devices with different ethanol vapor concentrations. | Microsystems & Nanoengineering

Fig. 4: Calculated sensitivity based on the extracted frequency shifts and AR changes of the proposed 1, 2, and 3-DoF devices with different ethanol vapor concentrations.

From: Multi-DoF AlN-on-SOI BAW MEMS resonators with coated ZIF-8 for gas sensing application

Fig. 4

a The 1-DoF device (frequency shifts). b The 2-DoF device in Mode 2 (frequency shifts). c The 2-DoF device in Mode 2 (AR changes). d The 3-DoF device in Mode 1 (frequency shifts). e The 3-DoF device in Mode 1 (AR changes). f The 3-DoF device in Mode 2 (frequency shifts). g The 3-DoF device in Mode 2 (AR changes)

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