Table 1 Parameters of the proposed devices
From: Multi-DoF AlN-on-SOI BAW MEMS resonators with coated ZIF-8 for gas sensing application
Parameters | Value |
|---|---|
Silicon disk radius and thickness (µm) | 400 and 10 |
Length and width of the coupling beam (µm) | 800 and 20 |
Radius of the top electrode (µm) | 385 |
Width and length of the suspension (µm) | 20 and 20 (stem); 20 and 145 (cap); 20 and 20 (column); |
Thickness of AlN layer (µm) | 0.5 |
FE simulated resonant frequency (MHz) | ~6.3–6.4 MHz |
