Table 4 The instability obtained by Allan Deviation calculation of the proposed 1, 2, and 3-DoF devices

From: Multi-DoF AlN-on-SOI BAW MEMS resonators with coated ZIF-8 for gas sensing application

Device

Allan Deviation (Frequency shift)

Allan Deviation (AR change)

Value

Integration time (s)

Value

Integration time (s)

1-DoF device

4.65 × 10−9

0.057

N/A

N/A

2-DoF device

9.8 × 10−9

0.44

8.824 × 10−6

1.654

3-DoF device: Mode 1

2.642 × 10-9

0.196

4.33 × 10-6

0.27

3-DoF device: Mode 2

1.73 × 10−8

0.95

4.58 × 10−5

1.8

  1. The bold numbers represent the best Allan deviation values in terms of frequency shift and AR changes among all the devices
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