Fig. 1: Universal axial nanogap platform for programmable flexoelectric engineering. | Nature Communications

Fig. 1: Universal axial nanogap platform for programmable flexoelectric engineering.

From: Free-standing two-dimensional ferro-ionic memristor

Fig. 1

a Schematic of a free-standing single 2D ferro-ionic memristor for spatial confinement of conductive filaments. b Free-standing 2D α-In2Se3/CuInP2S6 heterostructure and its corresponding TEM cross-sectional image and SAED mapping. c Schematic illustration of the 2D ferro-ionic memristor structure, constructed with an Au bottom electrode/α-In2Se3/CuInP2S6/Pt top electrode. d SEM image of the axial nanogap array with a 500 nm width and 150 nm depth. e Cross-sectional 3D line profile with tip-induced strain engineering. Flexoelectric current amplification effects in the f full I–V curve through shear strain.

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