Fig. 2: Local flexoelectric domain mapping with local strain distribution.
Schematic of the local strain distribution and its corresponding flexoelectric field in the a nanowrinkle and b nanogap. Spatial domain imaging of the c nanowrinkle CuInP2S6, d nanogap CuInP2S6, e nanowrinkle In2Se3, and f nanogap In2Se3. Owing to the local flexoelectric polarization, PFM measurements indicate the downward polarization, as observed in the PFM amplitude and PFM phase. The electron distribution was correlatively obtained for the ferroelectric insulator CuInP2S6 and ferroelectric semiconductor In2Se3, which originated from the heterogeneous carrier density of the semiconductor and insulator.
