Fig. 5: Theoretical validation of Cu+ ion dynamics within nanoscale flexoelectric engineering. | Nature Communications

Fig. 5: Theoretical validation of Cu+ ion dynamics within nanoscale flexoelectric engineering.

From: Free-standing two-dimensional ferro-ionic memristor

Fig. 5

a Full I–V curve of a single 2D ferro-ionic memristor and b its corresponding energy band diagram of b upward α-In2Se3 / downward CuInP2S6, c downward α-In2Se3 / downward CuInP2S6, d downward α-In2Se3 / upward CuInP2S6, and e upward α-In2Se3 / upward CuInP2S6. f Strain calculation of the free-standing 2D ferroelectric heterostructures with consideration of piezoelectric field and flexoelectric field, exhibiting the cross-sectional distribution of the g domain and h strain. Theoretical evaluation of flexoelectric energy storage, resulting in the i bias-polarization hysteresis and j strain-polarization hysteresis.

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