Fig. 1: The pOECT configuration.
From: Reconfiguration of organic electrochemical transistors for high-accuracy potentiometric sensing
Comparison of the (a) OECT, b gate referenced-OECT, and c pOECT configurations. In the top schematic, the black circle represents the electrolyte, and the dashed line represents the high-impedance connection of the potentiostat. The pink legend represents the cable labeling for the VDS application, and the purple legend represents the cable labeling for the VGS/VSG application. The 3D illustrations of the setups are in the middle panel, with G, GG, and GS placed vertically with respect to the channel. The red spheres represent the ionic flux of the leakage current. Microscopy images of the microfabricated devices at the bottom panel depict the planar G, GG, and GS. The channel size is 100 × 10 µm, and G, GG, and GS size is 500 × 500 µm. G and GS represent any type of sensing interface, while GG represents any conducting material that can act as a counter electrode.
