Fig. 1: FQH in Bernal-stacked TLG.
From: Universality of quantum phase transitions in the integer and fractional quantum Hall regimes
a Device schematic of TLG encapsulated between two hBN and few-layer graphite flakes. b Line plots of Gxy (left-axis; solid red line) and Rxx (right-axis; solid blue line) versus ν measured at B = 13 T, T = 20 mK, and D = 0 V/nm. The dashed vertical lines mark the FQH states formed at corresponding ν, and the arrows indicate corresponding plateaus in Gxy. c Calculated band structure of Bernal stacked trilayer graphene for D = 0 V/nm. The four LLs of the NM = 0 (The MLG LLs are marked by the subscripts M, and orbital contents are given by the numbers 0) band are indicated schematically. d Calculated Landau levels as a function of energy E and B for D = 0 V/nm. The blue lines are the monolayer-like LLs, while the red lines are the bilayer-like LLs. The solid and dotted lines indicate the LLs from K and \({K}^{{\prime} }\)-valley, respectively. The solid-green line is the spin-degenerate NM = 0−↑ and NM = 0−↓ monolayer-like LLs that host the FQH states probed in this article.
