Fig. 1: Fully integrated MPBTFT-based ARC system.
From: Analog reservoir computing via ferroelectric mixed phase boundary transistors
a Material-device co-optimization method for an area- and energy-efficient ARC system. HZO thin film near the MPB provides volatile memory characteristics suitable for physical reservoir and artificial neuron. Double-gate configuration of MPBTFT improves the resolution between the reservoir states and facilitates neuronal functionality. b Schematic of an MPBTFT-based ARC system utilizing c volatile MPBTFTs for physical reservoirs, d nonvolatile FeTFTs for synaptic devices in readout network, and e volatile MPBTFTs for leaky integrate-and-fire (LIF) neurons. MPBTFTs are identified as suitable candidates for physical reservoirs and LIF neurons within ARC systems, primarily owing to their inherent nonlinearity and short-term memory characteristics. FeTFTs are distinguished by their ability to represent multilevel synaptic weights with stability over time, making them ideal components for the readout network within ARC systems. By integrating these TFTs, ARC systems can harness the transient data processing capabilities of MPBTFTs with the long-term data retention properties of FeTFTs.
