Fig. 2: Displacement field dependence of the conductivity at CN.

a Conductivity σ as a function of density and displacement field measured at T ≈ 30 mK. b Vertical line cut of σ in (a) at CN. The conductivity shows local maxima at the critical displacement D_c = ±12.5 mV/nm. c Band structure of proximitized BLG at the K point. The calculation includes an Ising SOC term with Δ_I = 1.55 meV. The band structure is shown for three characteristic interlayer potential energies: U = 0 (left panel), U = 0.775 meV (central panel), and U = 2 meV (right panel). The energy axis is adjusted such that E = 0 corresponds to charge neutrality, which is marked by the horizontal dashed lines. The color code represents the layer polarization: blue indicates polarization on layer 1, while red is on layer 2, as shown in the schematics in the bottom right panel. The band structure shown in the left panel is the same as Fig. 1c, where we color-coded the bands according to the spin texture. d Conductivity at CN for D = 0 (violet) and D = D_c (orange) as a function of temperature in logarithmic scale. The crosses were measured in a dilution refrigerator, while the solid line was measured in a pumped He4 cryostat. The temperature range is divided into three regimes (A–C), according to relevant energy scales (E_th, E_dis, E_SO) defined in the main text. e Constant energy contours of the Fermi energy at charge neutrality for U = 0 (left panel) and U = U_c (right panel). The Fermi pockets are labeled according to their doping, electron e and holes h, and their spin (↑, ↓). Schematic: The side view of the BLG unit cell is schematically shown on a MoS₂ substrate. The color bar underneath defines the polarization of the electron wave function on the low energy orbitals, which are localized on the lattice site A₁ and B₂ (colored blue and red, respectively).