Fig. 3: Mechanism of stacking-dependent FDW in α-In2Se3. | Nature Communications

Fig. 3: Mechanism of stacking-dependent FDW in α-In2Se3.

From: Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

Fig. 3

a IP FDW atomic model after relaxation in 2H α-In2Se3 based on the atomic structures observed in the STEM image. b OOP FDW atomic model after relaxation in 3R α-In2Se3 based on the atomic structures observed in the STEM image. c, d Two simulated atomic models of OOP FDWs in 2H α-In2Se3 after relaxation. e The simulated IP FDW atomic model in 3R α-In2Se3 after relaxation. f Top and side views of differential charge density at IP FDW interfaces in 2H-stacked α-In2Se3 (area in vdW gap I in (a)). g Top and side views of the differential charge density at IP FDW interfaces in 3R-stacked α-In2Se3 (area in vdW gap II in (e)).

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