Fig. 4: Anomalous Hall effects in t1 + 3 and t2 + 3 devices.
From: Topological flat bands in a family of multilayer graphene moiré lattices
a Rxy measurement in the t1 + 3 device (θ = 1.29°) acquired as B is swept back and forth at ν = 3.02 and D = 0.523 V/nm. b Doping dependence of the AHE effect at the same displacement field characterized by the difference in the forward and backward sweeps, \(\Delta {R}_{xy}=({R}_{xy}^{\uparrow }-{R}_{xy}^{\downarrow })/2\). c Landau fan diagram of Rxy versus B around ν ≈ 3. The correlated Chern insulator emerging from ν = 3 exhibits a slope consistent with C = −2. d Rxy measurement in the t2 + 3 device (θ = 1.50°) acquired at ν = 0.75 and D = 0.532 V/nm. e Doping dependence of the AHE in the same device. f Landau fan diagram of ρxx versus B around ν ≈ 1. The correlated state at ν = 1 projects vertically, consistent with C = 0. All data acquired at T = 20 mK.
