Fig. 5: Analysis of the enhancement mechanism of PEC performance.

a PEIS curves of Au/GaN/Si and Au/Faceted-GaN/Si in 0.5 M H2SO4 (pH = 0). b The equivalent circuit model to fit the Nyquist plots. c The contact potential difference (CPD) mapping of Au/GaN/Si and Au/Faceted-GaN/Si. d The adsorption energy of Au nanoparticles on the GaN(00\(0\bar{1}\)) facet and GaN(10\(\bar{1}\bar{1}\)) facet. e Charge density difference distributions and Bader charge analysis of Au/GaN(00\(0\bar{1}\)) and Au/GaN(10\(\bar{1}\bar{1}\)). The yellow and green contours represent the charge accumulation and depletion, respectively. f Gibbs free energy of hydrogen adsorption by Au/GaN(00\(0\bar{1}\)) and Au/GaN(10\(\bar{1}\bar{1}\)) during the HER process. g The density of states (DOS) of Au 5d orbital on the Au/GaN(00\(0\bar{1}\)) and Au/GaN(10\(\bar{1}\bar{1}\)), where the dotted line represents the position of the d-band center. h Crystal orbital Hamilton population (COHP) analysis for the Au-H bonds in Au/GaN (00\(0\bar{1}\)) and Au/GaN(10\(\bar{1}\bar{1}\)).