Fig. 4: Structural and chemical analysis of the Si-deposited surface on a single-crystal Cu thin film (SCCF).
From: An impermeable copper surface monolayer with high-temperature oxidation resistance
a (top) Low-magnification annular dark-field (ADF) image and (bottom) electron energy loss spectroscopy elemental maps of Si (green), O (cyan), and Cu (blue) of the Si-deposited SCCF. b Normalized elemental profiles of the three elements. The gray profile of the signal contrast in the ADF image is given in reference to the Cu film. c Atomic resolution ADF image of the Si-treated SCCF showing the atomically clean surface. d Energy loss near edge structures (ELNES) of Cu L2,3 for Cu2O and the untreated SCCF. e Series of Cu L2,3 ELNES obtained across the Si-treated SCCF surface, as indicated by the vertical arrow in (c). f Profiles showing the change in the intensity ratio, A/B, of the Cu L3 (peak A at ~934 eV) to the flat level (peak B at ~940 eV) for the pristine SCCF (violet) and Si-treated SCCF (orange). Note that the A/B ratio of fully oxidized Cu2O is ~1.98 (orange spectrum in d). The solid line denotes the reference of pure Cu. Source data are provided as a Source Data file.
