Fig. 2: Electrical properties of the Ti1-xNbxCoSb single crystals.
From: Superior electron transport in the single-crystalline TiCoSb-based half-Heuslers
Temperature-dependent a electrical resistivity, b Seebeck coefficient, c power factor of the Ti1-xNbxCoSb single crystals. The dashed line in Fig. 2c is the data of the polycrystalline (Zr0.8Hf0.2)0.88Nb0.12CoSb16. Comparison of d the Hall carrier concentration vs. the Hall mobility, e the power factor vs. the Hall mobility between the single-crystalline Ti1-xNbxCoSb and polycrystalline MCoSb-based (M = Ti, Zr, Hf) and ZrCoBi-based samples. (The red-shaded region is single crystals prepared in this work, and the light-gray-shaded region is the previously reported polycrystals16,38,40,41), and f the comparison of the average power factor PFavg (from 307 K to 973 K) among the n-type single-crystalline Ti0.971Nb0.043CoSb (the composition is determined by EPMA), polycrystalline MCoSb-based (M = Ti, Zr, Hf) and ZrCoBi-based half-Heuslers16,38,39,41,43,51,52.
